NH3/N2-plasma treatment to prevent organic ILD degradation
US6436808B1 · kind B1 · utility
45Cited by
8References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 7, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Dec 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Degradation of organic low-k interlayer dielectrics during fabrication is substantially prevented or significantly reduced by treatment with a plasma containing a source of hydrogen and N2. Embodiments include treating a SiCOH, such as Black Diamond®, ILD with a NH3/N2 plasma after deposition, after forming a damascene opening therein and/or after CMP but prior to capping layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.