Patent · US Expired

Interconnection structure and method for fabricating same

US6436814B1 · kind B1 · utility

47Cited by
22References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 21, 2000
Grant dateAug 20, 2002
Priority date
Expiry dateDec 24, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An interconnection structure preferably including one or more conductors that have a central region filled with an insulator, and a method of fabricating such an interconnection structure for preferably making an electrical connection to the conductor(s). The method preferably includes the steps of depositing and patterning a first insulator over a substrate to form an aperture opening to the substrate; depositing and polishing a first conductor to leave the first conductor in the aperture; depositing and patterning a second insulator to form an opening through the second insulator and a recess in the aperture; depositing one or more second conductors to line the opening and the recess, and to form a central region of the interconnection structure; depositing a third insulator to at least partially fill the central region; and making an electrical connection to the second conductor(s).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.