Thin film metal barrier for electrical interconnections
US6437440B1 · kind B1 · utility
33Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2001 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Jan 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.