Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages

US6438019B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Walter Hartner · Munich, DE
• Gunther Schindler · Hersbruck, DE
• Frank Hintermaier · Hersbruck, DE

Key dates

• Filing date: Jan 8, 2001
• Grant date: Aug 20, 2002
• Expiry date: Jan 8, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B53/00

Abstract

The invention relates to a ferroelectric RAM configuration, including a number of storage cells, each of which has a selection transistor and a capacitor device with a ferroelectric dielectric. The capacitor device includes at least two capacitors whose coercive voltages are different from each other.