Pyrazolate copper complexes, and MOCVD of copper using same
US6440202B1 · kind B1 · utility
13Cited by
15References
9Claims
0Family size
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Key dates
| Filing date | Dec 13, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Dec 13, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/0803
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.