Nitride layer forming method
US6440230B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Mar 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nitride layer formation includes a method where a material is electrodeposited on a substrate and converted, at least in part, to a layer comprising nitrogen and the electrodeposited material. The electrodepositing may occur substantially selective on a conductive portion of the substrate. Also, the converting may comprise exposing the electrodeposited material to a nitrogen-comprising plasma. Chromium nitride and chromium oxynitride are examples of nitrogen-comprising materials. Copper or gold wiring of an integrated circuit are examples of a substrate. The chromium may be converted to a chromium-nitride-comprising diffusion barrier using a nitrogen-comprising plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.