Photoresist removing composition
US6440326B1 · kind B1 · utility
19Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Mar 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.