Method of detecting film defects using chemical exposure of photoresist films
US6440621B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Dec 20, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9505
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Various methods of inspecting a semiconductor workpiece for defects are provided. In one aspect, a method of inspecting a surface of a semiconductor workpiece for defects is provided that includes applying a negative-tone photoresist film to the surface and baking the negative-tone photoresist film to release solvent therefrom and to facilitate release of catalyzing substances held by the defects into the negative-tone photoresist film. The catalyzing substances react chemically with at least one moiety of the photoresist film to thereby lower the solubility of one or more portions of the negative-tone photoresist film in a developer. The negative-tone photoresist film is developed with the developer and the surface is inspected for the portions of the negative-tone photoresist film remaining after the developing process. The remaining portions of the negative-tone photoresist film are indicative of the locations of the defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.