Selective air gap insulation
US6440839B1 · kind B1 · utility
30Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Aug 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Air gap insulation regions are formed selectively within high parasitic capacitance regions in which conductive lines are closely proximate and generates an intolerable amount of parasitic capacitance. The selective formation of air gap insulation regions improves circuit performance by reducing the parasitic capacitance and device reliability by reducing the stress fracture problem of conventional air gap insulation schemes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.