Power semiconductor component for high reverse voltages

US6441408B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Alfred Porst · Munich, DE
• Helmut Strack · Hersbruck, DE
• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Heinrich Brunner · Dorfen, DE
• Josef Bauer · Munich, DE
• Reiner Barthelmess · Soest, DE

Key dates

• Filing date: Jan 17, 2001
• Grant date: Aug 27, 2002
• Expiry date: Jan 17, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/655

Abstract

A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.