Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same
US6441417B1 · kind B1 · utility
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13Claims
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Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Mar 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film structure includes a substantially single-phase, c-axis PGO film on an insulator for use in metal ferroelectric insulator semiconductor single transistor non-volatile memory applications. The PGO on insulator structure can also be used in capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. In a preferred embodiment, the PGO film is deposited on a Zirconium Oxide insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.