Sputtering target having an annular vault
US6444104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2001 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jul 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A target for a magnetron plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated and has a width of preferably at least 5 cm and an aspect ratio of at least 1:2, preferably 1:1. Various types of magnetic means positioned around the walls of the vault, some of which may rotate along the vault, create a magnetic field in the vault to support a plasma extending over a large volume of the vault from its top to its bottom. The large plasma volume within the vault increases the probability that the sputtered metal atoms will become ionized and be accelerated towards an electrically biased wafer support electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.