Laser tailoring retrograde channel profile in surfaces
US6444550B1 · kind B1 · utility
126Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Aug 26, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a retrograde channel profile is achieved by forming a retrograde impurity region in the surface portion of a semiconductor substrate, and subsequently forming a semiconductor layer on the retrograde impurity region at a predetermined thickness. The thickness of the semiconductor layer is controlled to localize the retrograde impurity region and its impurity concentration peak at a predetermined depth, thereby reducing the device's susceptibility to “reverse short channel effects.”
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.