Methods of forming and programming junctionless antifuses
US6444558B1 · kind B1 · utility
14Cited by
22References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1998 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Aug 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for forming a junctionless antifuse semiconductor structure comprises forming an antifuse in non-active areas of a semiconductor wafer. In one embodiment, the antifuse is formed over a polysilicon layer, which is coupled to a field oxide layer. In a further embodiment, the polysilicon layer comprises a bottom conductor layer in the antifuse. In another embodiment, a refractory metal silicide layer is formed between the polysilicon layer and the antifuse. In yet a further embodiment, the refractory metal silicide layer comprises the bottom conductor layer in the antifuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.