Light-emitting diode
US6445011B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 28, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jan 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a light-emitting diode, a substantially square flip chip is placed on a substantially square sub-mount at a position and posture which are obtained through superposition of a center point and center axis of the flip chip on a center point and center axis of the sub-mount and subsequent rotation of the flip chip about the center points by approximately 45°. Therefore, triangular exposed regions are formed on the sub-mount, in which two lead electrodes for the flip chip can be formed. As a result, the flip chip can be placed on a lead frame such that the center axis of the flip chip coincides with the center axis of a parabola of the lead frame. Further, the sub-mount is formed of a semiconductor substrate, and a diode for over-voltage protection is formed within the semiconductor substrate. Therefore, breakage of the light-emitting diode due to excessive voltage can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.