Embedded plasma source for plasma density improvement
US6446572B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 18, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Jan 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for regulating the plasma characteristics in a plasma processing system that includes a plasma generating assembly that generates a primarily inductively-coupled plasma from a process gas in a processing space to process a substrate. A walled enclosure is provided adjacent the processing space and is configured to generate a capacitively-coupled plasma from process gas therein. The enclosure further includes one or more outlets that permit the capacitively-coupled plasma to enter into the processing space. Charged particles from the capacitively-coupled plasma may be applied to alter the plasma density of the inductively-coupled plasma or to reduce the power required to generate the inductively-coupled plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.