Polishing agent for semiconductor substrates

US6447372B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stephan Bradl · Regensburg, DE
• Olaf Heitzsch · Coswig, DE

Key dates

• Filing date: Jan 25, 2000
• Grant date: Sep 10, 2002
• Expiry date: Jan 25, 2020

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K3/1463
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

The polishing agent of the invention has polishing grains suspended in a solution. The polishing grains consist essentially of a first substance with a glass transition temperature TG, and the polishing grains contain a dopant. The concentration of the dopant is set so that the glass transition temperature TG′ of the doped substance is lower than the glass transition temperature TG of the undoped first substance. The polishing agent is advantageously used for the microscratch-free planarization of a semiconductor substrate or of layers applied on it.