Method for nitride based laser diode with growth substrate removed
US6448102B1 · kind B1 · utility
108Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1999 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Mar 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after a thermally conducting substrate has been bonded to the side opposite the sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.