Method for epitaxial bipolar BiCMOS

US6448124B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• James S. Dunn · Jericho, US
• Peter J. Geiss · Underhill, US
• Peter B. Gray · Jericho, US
• David L. Harame · South Burlington, US
• Kathryn T. Schonenberg · Wappingers Falls, US
• Stephen A. St. Onge · Colchester, US
• Seshadri Subbanna · Brewster, US

Key dates

• Filing date: Nov 12, 1999
• Grant date: Sep 10, 2002
• Expiry date: Nov 12, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a BiCMOS integrated circuit is provided which comprises the steps of: (a) forming a first portion of a bipolar device in first regions of a substrate; (b) forming a first protective layer over said first regions to protect said first portion of said bipolar devices; (c) forming field effect transistor devices in second regions of said substrate; (d) forming a second protective layer over said second regions of said substrate to protect said field effect transistor devices; (e) removing said first protective layer; (f) forming a second portion of said bipolar devices in said first regions of said substrate; and (g) removing said second protective layer.