Method for use of a critical dimensional test structure
US6449031B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 13, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Nov 12, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.