Apparatus for exposing a substrate to plasma radicals
US6450116B1 · kind B1 · utility
59Cited by
10References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3387
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for exposing a substrate to plasma including a first reaction chamber adapted to generate a plasma comprising ions and radicals and a second reaction chamber coupled to the first reaction chamber and adapted to house a substrate at a sight in the second reaction chamber. The second reaction chamber is coupled to the first reaction chamber by an inlet member and radicals of the plasma flow through the inlet member into the second reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.