Patent · US Expired

Method and apparatus for fabricating high quality single crystal

US6451112B1 · kind B1 · utility

25Cited by
11References
27Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 12, 2000
Grant dateSep 17, 2002
Priority date
Expiry dateOct 19, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/10
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A crucible for growing a single crystal therein has a seed crystal attachment portion and a peripheral portion surrounding the seed crystal attachment portion through a gap provided therebetween. The seed crystal attachment portion has a support surface for holding a seed crystal on which the single crystal is to be grown, and the support surface is recessed from a surface of the peripheral portion. The seed crystal is attached to the support surface to cover an entire area of the support surface. Accordingly, no poly crystal is formed on the seed crystal attachment portion, and the single crystal can be grown on the seed crystal with high quality.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.