Deposition of TEOS oxide using pulsed RF plasma
US6451390B1 · kind B1 · utility
15Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Apr 6, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Apr 6, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/153
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.