Method of making a MIM capacitor with self-passivating plates

US6451664B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Barth · Munich, DE
• Gerald Friese · Munich, DE
• Petra Felsner · Munich, DE

Key dates

• Filing date: Jan 30, 2001
• Grant date: Sep 17, 2002
• Expiry date: Jan 30, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

A method of making a metal-insulator-metal (MIM) capacitor (158) having self-passivating plates (143, 155). A liner (116) is deposited on a workpiece (112) and dielectric (114). A conductive layer (142) is deposited and annealed to form dopant-rich region (144). Insulating region (145) is formed on exposed portions of dopant-rich region (144) by exposure to atmosphere or oxygen. Capacitor dielectric layer (146) is disposed over the first capacitive plate (143). A second capacitive plate (155) is formed over the first capacitive plate (143) and capacitor dielectric layer (146). The second capacitive plate (155) is annealed to form dopant-rich region (154) and exposed to atmosphere or oxygen to form insulating region (156). Optional seed layer (140) may be deposited prior to the formation of the first capacitive plate (143).