Damascene metal capacitor
US6452251B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor (60 and 126) fabricated on a semiconductor chip which has a strap contact (41A, 119A) which interconnects the bottom plate (41B, 111A) of the capacitor into the chip circuitry. In one version, an extension of the material making up the bottom plate of the capacitor forms the strap contact. In another version, the capacitor (185) includes a folding of the bottom plate, dielectric layer and top plate to utilize available space and thus increase its capacitance. Several manufacturing methods allow for integration of fabrication of the various versions of the capacitor into a standard dual or single damascene manufacturing process, including a copper damascene process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.