Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity
US6452761B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Jan 14, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49043
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.