Electrostatic chuck and method for manufacturing the same
US6452775B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electrostatic chuck includes a metal substrate. A conductive ceramic layer is disposed above the metal substrate. A high purity barrier layer is disposed above the conductive ceramic layer. The high purity barrier layer preferably has a thickness of not more than about 200 &mgr;m and a purity of at least about 99%. Exemplary materials from which the high purity insulation layer may be formed include alumina, silicon dioxide, silicon nitride, and sapphire. A method for manufacturing an electrostatic chuck includes providing a metal substrate, forming a ceramic layer over the metal substrate, and forming a high purity barrier layer over the ceramic layer. The high purity barrier layer may be formed by plasma spray coating, chemical vapor deposition, or sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.