Pattern transfer method and apparatus, and device manufacturing method
US6455211B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1999 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Feb 3, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7003
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The joint precision of a transfer pattern is improved by correcting the relative positions between the partial transfer patterns on a transfer mask and a transfer medium. The positions of alignment marks for the partial transfer patterns on the transfer mask are measured (step 23), and the actual coordinate system of the alignment marks is calculated based on the measured positions (step 25). Parameters that represent the relative relationship between the actual coordinate system calculated in step 25 and a design coordinate system are calculated (step 26), and the transfer positions of the partial transfer patterns to the transfer medium are calculated based on the calculated parameters (step 29). After that, a mask stage and wafer stage are driven based on the transfer positions calculated in step 29 to sequentially transfer patterns by exposure (steps 34 to 40).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.