Patent · US Expired

Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum

US6455328B2 · kind B2 · utility

1Cited by

0References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Harald Bachhofer · Hersbruck, DE
Walter Hartner · Munich, DE
Guenther Schindler · Hersbruck, DE
Thomas Haneder · Hersbruck, DE
Wolfgang Hoenlein · Unterhaching, DE

Key dates

Filing date	Feb 12, 2001
Grant date	Sep 24, 2002
Priority date	—
Expiry date	Feb 12, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02197
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The crystallization temperature of a ferroelectric layer (3) (dielectric) for a storage capacitor can be lowered by applying a very thin (CeO2 layer (2) to a first platinum electrode layer (1) of the storage capacitor before the ferroelectric layer is deposited. The dielectric layer (3) deposited in amorphous state is then crystallized by a temperature treatment step at a temperature in the range between 590° C. and 620° C. A second electrode layer (4) is then applied to complete the storage capacitor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.