Thomas Haneder
19Patents
5h-index
41Co-inventors
58Inventor score
Filing activity: Jan 8, 2001 → Dec 29, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6798000B2 | Field effect transistor | Emerging Cross-Sectional Technologies | 149 | Expired |
| US6438022B2 | Memory cell configuration | Electricity | 11 | Expired |
| US6787832B2 | Semiconductor memory cell and semiconductor memory device | Electricity | 9 | Expired |
| US6737689B1 | FEMFET device and method for producing same | Electricity | 8 | Expired |
| US6707082B2 | Ferroelectric transistor | Electricity | 8 | Expired |
| US6614066B2 | Ferroelectric transistor and memory cell configuration with the ferroelectric transistor | Electricity | 5 | Expired |
| US6538273B2 | Ferroelectric transistor and method for fabricating it | Electricity | 4 | Expired |
| US6894330B2 | Memory configuration and method for reading a state from and storing a state in a ferroelectric transistor | Physics | 4 | Expired |
| US7115897B2 | Semiconductor circuit configuration and semiconductor memory device | Electricity | 2 | Expired |
| US7911026B2 | Chip carrier with reduced interference signal sensitivity | Electricity | 2 | Active |
| US6670661B2 | Ferroelectric memory cell with diode structure to protect the ferroelectric during read operations | Electricity | 1 | Expired |
| US6455328B2 | Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum | Electricity | 1 | Expired |
| US6710388B2 | Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistor | Electricity | 1 | Expired |
| US6944044B2 | Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7049628B2 | Semiconductor memory cell and semiconductor memory device | Electricity | 1 | Expired |
| US6469887B2 | Capacitor for semiconductor configuration and method for fabricating a dielectric layer therefor | Electricity | 0 | Expired |
| US6815224B2 | Low-temperature processing of a ferroelectric strontium bismuth tantalate layer, and fabrication of ferroelectric components using the layer | Electricity | 0 | Expired |
| US6552385B2 | DRAM memory capacitor having three-layer dielectric, and method for its production | Electricity | 0 | Expired |
| US7410794B2 | Device based on partially oxidized porous silicon and method for its production | Chemistry; Metallurgy | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.