Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers
US6455414B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Nov 28, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for improving adhesion of copper films to transition metal based barrier layers. Tantalum or other transition metal based barrier layers are deposited by chemical vapor deposition techniques using transition metal halide precursor materials which generate halogen atom impurities in the barrier layer. The barrier layer is treated with a plasma generated from a nitrogen-containing gas, such as ammonia. Halogen impurity levels are thereby decreased at the surface of the barrier layer. On this surface is subsequently applied a copper film by physical vapor deposition. The copper film exhibits improved adherence to the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.