NH3 plasma descumming and resist stripping in semiconductor applications
US6455431B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Aug 1, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor substrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate bias voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlying layer of an organic dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.