Unipolar light emitting devices based on III-nitride semiconductor superlattices
US6455870B1 · kind B1 · utility
36Cited by
9References
7Claims
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Key dates
| Filing date | Jun 14, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Jun 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The fabrication of unipolar light emitting devices (ULEDs) based on III-nitride semiconductors is disclosed using an effective “p-n junction” between two n-type III-nitride semiconductor superlattices. Such a device works like a usual light emitting diode at forward bias but the radiation arises not due to recombination of electrons and holes but due to electron transitions from a shallow sub-band superlattice into a deep sub-band superlattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.