Hybrid resistive cross point memory cell arrays and methods of making the same
US6456524B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2001 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Oct 31, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage device that includes a novel resistive cross point memory cell array and a method of making the data storage device are described. The resistive cross point memory cell array enables high-density fabrication and high-speed operation with isolation diodes that have practical dimensions and current density characteristics. In addition, the data storage device includes a novel equipotential isolation circuit that substantially avoids parasitic currents that otherwise might interfere with the sensing of the resistance state of the memory cells. In one aspect, the memory cells of the resistive cross point memory cell array are arranged into multiple groups of two or more memory cells. The memory cells of each group are connected between a respective word line and a common isolation diode that is coupled to a bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.