Pretreatment process for plasma immersion ion implantation
US6458430B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1999 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for use with a plasma immersion ion implantations systems wherein a substrate W having a patterned photoresist P thereon is implanted. The method includes ionizing a first gas in a chamber 12 to produce electrically inactive ions and reacting the electrically active ions with the photoresist P to produce outgassing 64. The outgassed material 64 is continuously evacuated until outgassing is substantially completed. The method further includes ionizing a second gas to produce electrically active ions and implanting a positively charged species of the electrically active ions into the substrate. Also disclosed is a method for curing the photoresist prior to ion implantation. A gas is ionized in the chamber 12 to produce positively and electrons. The electrons are first attracted to a substrate in the chamber having patterned photoresist P thereon for hardening the photoresist. The positively charged ions are then implanted into substrate W wherein photoresist outgassing is substantially prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.