Method to control nested to isolated line printing
US6458493B2 · kind B2 · utility
2Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1999 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Jun 4, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and structure for a photomask that includes a substrate having a first transmittance, a first pattern to be transferred to a photosensitive layer (the first pattern having a second transmittance lower than the first transmittance) and a second pattern having a third transmittance greater than the second transmittance and less than the first transmittance. The second pattern is adjacent at least a portion of the first pattern, and the substrate and the second pattern transmit light substantially in phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.