Photoresist stripping composition and process for stripping photoresist
US6458517B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 28, 2000 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Mar 28, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO—(CpH2pO)q—R, wherein R is C1-C4 alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.