Capacitor having tantalum oxynitride film and method for making same
US6458645B2 · kind B2 · utility
29Cited by
7References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1998 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Feb 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.