Fluorine-containing materials and processes
US6458718B1 · kind B1 · utility
257Cited by
10References
47Claims
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Inventor
Key dates
| Filing date | Apr 24, 2001 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Apr 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical precursors that contain carbon atoms and fluorine atoms can be activated under a variety of conditions to deposit fluorine-containing materials. Chemical precursors of the formula (F3C)4−m−nMXmRn, are preferred, wherein M is Si or Ge; X is halogen; R is H or D; m is 0, 1, 2 or 3; and n is 0, 1, 2, or 3; with the proviso that (m+n)≦3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.