Patent · US Expired

Controlled method of silicon-rich oxide deposition using HDP-CVD

US6458722B1 · kind B1 · utility

10Cited by
7References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 2000
Grant dateOct 1, 2002
Priority date—
Expiry dateDec 20, 2020

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/402
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method and system for forming a layer on a substrate in a process chamber are provided. Deposition gases are provided to the process chamber and permitted to mix in the desired relative concentrations prior to the deposition step, resulting in improved composition uniformity of the layer. This may be accomplished by generating a heating plasma from a first gaseous mixture. The plasma is then terminated and a second gaseous mixture is provided to the process chamber such that the second gaseous mixture is substantially uniformly mixed. A second plasma is then generated from the second gaseous mixture to deposit the layer on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.