Vertical geometry ingan LED
US6459100B1 · kind B1 · utility
116Cited by
19References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Nov 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
Abstract
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.