Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics
US6459103B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2000 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Jan 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
An InP/InGaAlAs heterojunction bipolar transistor with the characteristics of amplification and negative-differential-resistance phenomenon is presented in the invention. The 3-terminal current-voltage characteristics of the heterojunction bipolar transistor can be controlled by the applied base current. In the large collector current regime, the heterojunction bipolar transistor has the characteristics as similar to conventional bipolar junction transistors. However, in a small collector current regime, both the transistor active region and negative-differential-resistance loci are observed. The negative-differential-resistance phenomenon is caused by the insertion of a thin base layer and a &dgr;-doped sheet. Moreover, the use of a setback layer with a thickness of 50 å added at the emitter-base junction can suppress the diffusion of doping impurity in the base and reduce the potential spike at emitter-base heterojunction so as to improve the confinement of holes injected from base to emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.