Method and apparatus for performing high pressure physical vapor deposition
US6461483B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.