Decoupling capacitor method and structure using metal based carrier
US6461493B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1999 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Dec 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1142
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.