Semiconductor memory device having plug contacted to a capacitor electrode and method for fabricating a capacitor of the semiconductor memory device
US6461913B2 · kind B2 · utility
3Cited by
16References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 18, 2001 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Jun 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor memory device and a method of preventing the contact between a dielectric layer of a capacitor and a diffusion barrier. The plug to be contacted to an electrode of a capacitor, comprises a diffusion barrier layer and a conducting layer. The conducting layer is formed with a material capable of flowing current when the conducting layer is oxidized. Accordingly, it is possible to prevent the dielectric layer being contacted with the diffusion barrier, there by the leakage current may be reduced, and the capacitance of the capacitor may be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.