Methods for forming a dielectric film
US6461982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1997 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Feb 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a high dielectric oxide film includes forming a high dielectric oxide film on a surface. The high dielectric oxide film has a dielectric constant greater than about 4 and includes a plurality of oxygen vacancies present during the formation of the film. The high dielectric oxide film is exposed during the formation thereof to an amount of atomic oxygen sufficient for reducing the number of oxygen vacancies. Further, the amount of atomic oxygen used in the formation method may be controlled as a function of the amount of oxygen incorporated into the high dielectric oxide film during the formation thereof or be controlled as a function of the concentration of atomic oxygen in a process chamber in which the high dielectric oxide film is being formed. An apparatus for forming the high dielectric oxide film is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.