Films doped with carbon for use in integrated circuit technology
US6462371B1 · kind B1 · utility
244Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1999 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Jan 13, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention pertains to films comprising silicon and oxygen that are doped with carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.