Silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device with backside contact opening
US6462381B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2001 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Feb 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic discharge (ESD) protection device for a silicon-on-insulator (SOI) integrated circuit having a silicon substrate with a buried oxide layer disposed thereon and an active layer disposed on the buried oxide layer having active regions defined by isolation trenches. The ESD protection device formed on the SOI integrated circuit and has an anode and a cathode formed within one of the active regions and coupled respectively to a first and a second node; and a filled backside contact opening disposed under and in thermal contact with at least one of the anode or the cathode, the backside contact opening traversing the buried oxide layer to thermally couple the one of the active regions and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.