Copper atomic layer chemical vapor desposition
US6464779B1 · kind B1 · utility
140Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jan 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention pertains to systems and methods for atomic layer chemical vapor deposition. More specifically, the invention pertains to methods for copper atomic layer chemical vapor deposition, particularly to deposit a seed layer prior to the electrochemical Cu fill operation in integrated circuit fabrication. It also pertains to apparatus modules for performing such deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.