Resist composition and pattern forming process
US6465137B2 · kind B2 · utility
2Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Apr 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.